Dopant Selective Deep Reactive Ion Etching of 4H-SiC Wafer

Description

NASA/NSSC has a requirement for Dopant Selective Deep Reactive Ion Etching of 4H-SiC Wafer. See attached SOW for full details of the requirement. VENDORS MUST REFERENCE THE NOTICE ID WHEN SUBMITTING A CAPABILITY STATEMENT. NOTE: Quotes received in response to this notice will NOT be considered and will not be evaluated by NASA’s Technical End User Team. We are currently only requesting Capability Statements.

Classification

NAICS

334413

Semiconductor and Related Device Manufacturing

31-33├Manufacturing

334├Computer and Electronic Product Manufacturing

3344├Semiconductor and Other Electronic Component Manufacturing

33441├Semiconductor and Other Electronic Component Manufacturing

334413└Semiconductor and Related Device Manufacturing

PSC

5961

SEMICONDUCTOR DEVICES AND ASSOCIATED HARDWARE

59├ELECTRICAL/ELECTRONIC EQPT COMPNTS

5961└Semiconductor Devices and Associated Hardware

Description

Points of contact

Contracting office

Classification

Documents